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HiPerFASTTM IGBT ISOPLUS247TM
Lightspeed 2TM Series
IXGR 60N60C2 IXGR 60N60C2D1
(Electrically Isolated Back Surface)
Preliminary Data Sheet
IXGR_C2 IXGR_C2D1
VCES IC25 VCE(sat) tfi(typ)
= 600 V = 75 A = 2.7 V = 35 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 110C (IXGR60N60C2D1) TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ VCE 600 V TC = 25C
Maximum Ratings 600 600 20 30 75 48 39 300 ICM = 100 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A
ISOPLUS247 (IXGR)
C
E
(ISOLATED TAB)
G = Gate E = Emitter Features
C = Collector
W C C C V g C
DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages
50/60 Hz RMS, t = 1m
2500 5 300
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 600 3.0 GR60N60C2 GR60N60C2D1 5.0 50 650 100 TJ = 25C TJ = 125C 2.3 2.0 2.7 V V A A nA V V
BV CES VGE(th) ICES IGES VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 250 A, VCE = VGE
Easy assembly High power density Very fast switching speeds for high frequency applications
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 50 A, VGE = 15 V Note 1
(c) 2004 IXYS All rights reserved
DS99051D(05/04)
IXGR 60N60C2 IXGR 60N60C2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 55 3900 280 320 97 140 IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 35 18 25 95 150 35 0.49 Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 18 25 1.6 130 80 0.92 0.25 0.8 S pF pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ ISOPLUS 247 Outline
gfs Cies Coes C res Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJ-DCB RthJC RthCS
IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz
60N60C2 60N60C2D1
Inductive load, TJ = 25C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0
(Note 2) (Note 3)
K/W 0.50 K/W 0.15 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150C 2.0 1.39 8.3 35 V A ns 0.85 K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, VGE = 0 V, Note 1
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/ TJ = 100C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t 300 s, duty cycle 2 % 2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate 3: RthJC is the thermal resistance junction-to-external side of DCB substrate
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXGR 60N60C2 IXGR 60N60C2D1
Fig. 1. Output Characteristics @ 25 Deg. C
1 00 90 80 VG E = 15V 13V 11 V 9V 200 1 75 1 50
Fig. 2. Extended Output Characteristics @ 25 deg. C
VG E = 15V 13V 11 V
9V
I C - Amperes
I C - Amperes
70 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5
7V
1 25 1 00 75 50
7V
5V
25 0
5V 1 1 .5 2 2.5 3 3.5 4 4.5
3
3.5
V CE - Volts
V CE - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
1 00 90 80 70 VG E = 15V 13V 11 V 9V 1 .1 1 .2
Fig. 4. Temperature Dependence of V CE(sat)
VC E (sat) - Normalized
VG E = 15V 1 0.9 0.8 0.7
I C = 100A
I C - Amperes
7V
60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 3 3.5
I C = 50A
5V
I C = 25A 0.6 0.5 25 50 75 1 00 1 25 1 50
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage
5 4.5 4 T J = 25 C 200 1 75 1 50
Fig. 6. Input Admittance
VCE - Volts
3.5 3 2.5 2 1 .5 1 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5
I C - Amperes
1 25 1 00 75 50 25 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 T J = 125 C 25 C -40 C
I C = 100A
50A 25A
V GE - Volts
(c) 2004 IXYS All rights reserved
V GE - Volts
IXGR 60N60C2 IXGR 60N60C2D1
Fig. 7. Transconductance
1 00 90 80 T J = -40 C 25 C
Fig. 8. Dependence of Eoff on RG
6 5 TJ = 125 C VGE = 15V VCE = 400V I C = 100A
E off - milliJoules
g f s - Siemens
70 60 50 40 30 20 1 0 0 0 25
125 C
4 I C = 75A 3 2 1 0 I C = 25A 2 4 6 8 1 0 1 2 1 4 1 6 I C = 50A
50
75
1 00
1 25
1 50
1 75
200
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on Ic
5 R G = 3 . R G = 10 - - - - 4 5
Fig. 10. Dependence of Eoff on Temperature
R G= 3 R G= 10 - - - - 4 VG E = 15V VC E = 400V I C = 75A
I C = 100A
E off - MilliJoules
3
T J = 125 C
E off - milliJoules
VG E = 15V VC E = 400V
3
2 T J = 25 C 1
2 I C = 50A 1 I C = 25A
0 20 30 40 50 60 70 80 90 1 00
0 25 50 75 1 00 1 25
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Gate Charge
1 5 VC E = 300V I C = 50A I G = 10mA 1 0000
Fig. 12. Capacitance
f = 1M Hz C ies 1 000 C oes
1 2
VG E - Volts
9
6
Capacitance - pF
1 00 C res
3
0 0 20 40 60 80 1 00 1 20 1 40
1 0 0 5 1 0 1 5 20 25 30 35 40
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
V CE - Volts
IXGR 60N60C2 IXGR 60N60C2D1
Fig. 13. Maxim um Transient Therm al Resistance
0.55 0.5 0.45
R( t h ) J C - C / W
0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1 10
Pulse Width - milliseconds
100
1000
(c) 2004 IXYS All rights reserved
IXGR 60N60C2 IXGR 60N60C2D1
160 A 140 IF 120 100 80 60 40 20 0 0 1 VF 2 V 0 100 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt 4000 nC
TVJ= 100C VR = 300V
80 A
TVJ= 100C VR = 300V
TVJ= 25C TVJ=100C
3000 Qr 2000
IF=120A IF= 60A IF= 30A
60 IRM 40
TVJ=150C
1000 20
IF=120A IF= 60A IF= 30A
Fig. 14. Forward current IF versus VF
2.0
Fig. 15. Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 16. Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 s tfr
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
IRM
100 0.5
IF=120A IF= 60A IF= 30A
tfr
10
VFR
1.2
0.8
Qr
5 90 80 0
0.4
0.0
TVJ= 100C IF = 60A
0 200 400
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0.0 600 A/s 1000 800 diF/dt
Fig. 17. Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 18. Recovery time trr versus -diF/dt
Fig. 19. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399
0.001
0.0001 0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
s t
1
Fig. 20. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.

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